Piezoelectrically Activated Silicon Resonators

Author

Baborowski, J. ; Bourgeois, C. ; Pezous, A. ; Muller, C. ; Dubois, M.A.

Author_Institution

CSEM, Neuchatel

fYear

2007

fDate

May 29 2007-June 1 2007

Firstpage

1210

Lastpage

1213

Abstract

This paper describes the feasibility and performances of two families of AIN/Si resonators: 1 MHz extensional and 20 to 100 kHz flexural resonators. In both components the resonating structure is obtained with SOI silicon suspended beams driven by an AIN piezoelectric layer. The 1MHz resonator exhibits a Q factor larger than 100 000 under vacuum and a coupling coefficient of 0.06%. The 20 to 100kHz resonators exhibit extremely low thermal drift of resonant frequency (alpha close to zero). The thermal compensation has been obtained at device-level by using SiO₂ with an appropriate thickness.

Keywords

III-V semiconductors; Q-factor; aluminium compounds; crystal resonators; elemental semiconductors; silicon; AIN piezoelectric layer; Q factor; Si-AlN; SiO₂; flexural resonator; frequency 1 MHz; frequency 20 kHz to 100 kHz; piezoelectrically activated silicon resonator; thermal compensation; Electronic packaging thermal management; Energy consumption; Fabrication; Micromechanical devices; Oscillators; Q factor; Resonant frequency; Silicon; Vibrations; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Frequency Control Symposium, 2007 Joint with the 21st European Frequency and Time Forum. IEEE International

Conference_Location

Geneva

ISSN

1075-6787

Print_ISBN

978-1-4244-0646-3

Electronic_ISBN

1075-6787

Type

conf

DOI

10.1109/FREQ.2007.4319269

Filename

4319269