• DocumentCode
    3457468
  • Title

    A Novel Ultra Broadband 8-45 GHz 4-Bit GaAs Pseudomorphic High Electron Mobility Transistors (pHEMT) Monolithic Digital Attenuator Used for Gain Control of Transceivers

  • Author

    Wen, Xing ; Yu, Fa-Xin ; Sun, Ling-Ling

  • Author_Institution
    Key Lab. of RF Circuits & Syst., Hangzhou Dianzi Univ., Hangzhou, China
  • fYear
    2009
  • fDate
    7-9 Dec. 2009
  • Firstpage
    519
  • Lastpage
    522
  • Abstract
    A novel broadband, 8 to 45 GHz 4-bit MMIC digital attenuator which could be used for gain control of transceivers has been designed. The attenuator has been designed with 0.25 ¿m GaAs pHEMT process. Ultra broad bandwidth and high attenuation accuracy has been achieved by using different types of configurations. This attenuator has 1 dB resolution and 15 dB dynamic range. The normalized attenuation accuracy is better than 0.6 dB over all attenuation range and full 37 GHz bandwidth. The reference state insertion loss is less than 6 dB at 20 GHz. The input and output return losses of the attenuator are better than 11 dB over all attenuation states and operating frequencies.
  • Keywords
    III-V semiconductors; MMIC; attenuators; gain control; gallium arsenide; high electron mobility transistors; microwave transistors; transceivers; GaAs; MMIC; attenuation accuracy; digital attenuator; frequency 8 GHz to 45 GHz; gain control; insertion loss; monolithic digital attenuator; pHEMT; pseudomorphic high electron mobility transistors; return loss; size 0.25 mum; transceivers; Attenuation; Attenuators; Bandwidth; Electron mobility; Gain control; Gallium arsenide; HEMTs; MODFETs; PHEMTs; Transceivers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Innovative Computing, Information and Control (ICICIC), 2009 Fourth International Conference on
  • Conference_Location
    Kaohsiung
  • Print_ISBN
    978-1-4244-5543-0
  • Type

    conf

  • DOI
    10.1109/ICICIC.2009.42
  • Filename
    5412396