Title :
High efficiency harmonically-tuned gan power amplifier for 4G applications
Author :
Darraji, Ramzi ; Ghannouchi, Fadhel M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Calgary, Calgary, AB, Canada
Abstract :
This paper presents the design of high efficiency harmonically-tuned gallium nitride (GaN) power amplifier (PA) based on multi-harmonics load-pull measurements. The high efficiency performance is achieved by controlling the second and third harmonic output impedances at fixed fundamental output impedance using an optimized low-loss output matching network. Measurement results demonstrate that the PA prototype achieved a peak power-added efficiency of 71% and a small-signal gain of 18 dB. Using a one-carrier Worldwide Interoperability for Microwave Access (WiMAX) signal with a 7.3 dB peak-to-average power ratio (PAPR), the digitally linearized PA exhibited an average drain efficacy of 28% at an average output power of 32.8 dBm along with -55 dBc adjacent channel power ratio at the 5 MHz offset, successfully meeting the WiMAX linearity requirements.
Keywords :
4G mobile communication; III-V semiconductors; WiMax; gallium compounds; power amplifiers; semiconductor device models; 4G application; GaN; PA prototype; PAPR; WiMAX signal; drain efficacy; harmonically-tuned GaN power amplifier; multiharmonics load-pull measurement; optimized low-loss output matching network; peak power-added efficiency; peak-to-average power ratio; second harmonic output impedance; third harmonic output impedance; worldwide interoperability for microwave access; Gain; Gallium nitride; Harmonic analysis; Power amplifiers; Power generation; Power measurement; WiMAX; Digital predistortion; GaN; WiMAX; load-pull; power efficiency;
Conference_Titel :
Electrical and Computer Engineering (CCECE), 2011 24th Canadian Conference on
Conference_Location :
Niagara Falls, ON
Print_ISBN :
978-1-4244-9788-1
Electronic_ISBN :
0840-7789
DOI :
10.1109/CCECE.2011.6030666