Title :
Compton recoil electron tracking with silicon strip detectors
Author :
O´Neill, T.J. ; Ait-Ouamer, F. ; Schwartz, I. ; Tumer, O.T. ; White, R.S. ; Zych, A.D.
Author_Institution :
Inst. of Geophys. & Planetary Phys., California Univ., Riverside, CA, USA
Abstract :
The application of silicon strip detectors to Compton gamma-ray astronomy telescopes is described. The silicon Compton recoil telescope tracks Compton recoil electrons in silicon strip converters to provide a unique direction for Compton-scattered gamma rays above 1 MeV. With strip detectors of modest positional and energy resolutions of 1 mm full width at half maximum (FWHM) and 3% at 662 keV, respectively, true imaging can be achieved to provide an order of magnitude improvement in sensitivity to 1.6*10/sup -6/ gamma /cm/sup 2/-s at 2 MeV. The results of extensive Monte Carlo calculations of recoil electrons traversing multiple layers of 200- mu m silicon wafers are presented. Multiple Coulomb scattering of the recoil electron in the silicon wafer of the Compton interaction and the next adjacent wafer is the basic limitation to determining the electron´s initial direction.<>
Keywords :
Monte Carlo methods; astronomical telescopes; electron detection and measurement; gamma-ray astronomy; gamma-ray detection and measurement; position sensitive particle detectors; semiconductor counters; 1 MeV; 2 MeV; 200 micron; 662 keV; Compton gamma-ray astronomy telescopes; Compton recoil electrons; Compton recoil telescope; Compton-scattered gamma rays; Monte Carlo calculations; Si strip detectors; Si wafers; Astronomy; Electrons; Energy resolution; Gamma ray detection; Gamma ray detectors; Gamma rays; Optical imaging; Silicon; Strips; Telescopes;
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference, 1991., Conference Record of the 1991 IEEE
Conference_Location :
Santa Fe, NM, USA
Print_ISBN :
0-7803-0513-2
DOI :
10.1109/NSSMIC.1991.258958
