DocumentCode :
3457930
Title :
Cancellation of electrical memory effects in FET power amplifiers
Author :
Richards, Andrew ; Morris, Kevin A. ; McGeehan, Joe P.
Author_Institution :
Centre for Commun. Res., Bristol Univ., UK
Volume :
2
fYear :
2005
fDate :
4-6 Oct. 2005
Abstract :
Memory effects are often responsible for degrading the performance of amplifier linearization schemes. This paper presents a circuit which is capable of cancelling electrical memory effects present within amplifiers employing FET devices. Practical results show that the circuit can provide the conditions necessary for suppression of asymmetry and reduction of frequency dependent variation within the intermodulation distortion. Successful operation is possible for signals having bandwidths of up to 30MHz.
Keywords :
field effect transistor circuits; interference suppression; intermodulation distortion; linearisation techniques; power amplifiers; FET devices; FET power amplifiers; amplifier linearization schemes; electrical memory effects; intermodulation distortion; Bandwidth; Baseband; Circuits; FETs; Frequency dependence; Impedance; Intermodulation distortion; Linearity; Power amplifiers; Telephony;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2005 European
Print_ISBN :
2-9600551-2-8
Type :
conf
DOI :
10.1109/EUMC.2005.1610090
Filename :
1610090
Link To Document :
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