Title :
Ion-implanted capacitively coupled double sided silicon strip detectors with integrated polysilicon bias resistors processed on a 100 mm wafer
Author :
Aalste, M. ; Hentinen, A. ; Hietanen, I. ; Lindgren, J. ; Ronnqvist ; Schulman, T. ; Tuuva, T. ; Voutilainen, Martti ; Osterberg, K. ; Andersson, Mats ; Leinonen, K. ; Ronkainen, H. ; Brenner, R. ; Karsten, J. ; Straver, J. ; Dulinski, W. ; Husson, D. ; T
Author_Institution :
Res. Inst. for High Energy Phys., SEFT, Helsinki, Finland
Abstract :
Silicon strip detectors with double-sided readout have been designed and processed on 100-mm silicon wafers. Detectors with integrated coupling capacitors and polysilicon bias resistors were tested by static electrical measurements. A detector with VLSI readout electronics was measured in a test beam. Test beam measurements show signal over noise ratios of 39 on the detector p-side and 26 on the n-side.<>
Keywords :
nuclear electronics; position sensitive particle detectors; semiconductor counters; 100 mm; Si strip detectors; VLSI readout electronics; double-sided readout; integrated coupling capacitors; integrated polysilicon bias resistors; ion implanted capacitively coupled detectors; static electrical measurements; Capacitors; Detectors; Electric variables measurement; Electronic equipment testing; Process design; Readout electronics; Resistors; Silicon; Strips; Very large scale integration;
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference, 1991., Conference Record of the 1991 IEEE
Conference_Location :
Santa Fe, NM, USA
Print_ISBN :
0-7803-0513-2
DOI :
10.1109/NSSMIC.1991.258975
