MDS-structure with carbon diamond-like film (CDLF)

CDLF of carbon obtained by an ionic-radial method with the following parameters was used: thickness 6-40 nm; pattern amorphous with crystallites Sp/sup 3/ of a phase with size /spl Gt/1 nm; structure has 97% carbon and 3% hydrogen; a factor of an interception 2.0-2.2 on /spl lambda/=0.632 /spl mu/m; resistivity /spl rho/=10/sup 11/-10/sup 13/ /spl Omega//spl middot/cm; electrical field of a breakdown 5/spl middot/10/sup 9/ V/m. The analysis of the above-stated parameters indicates high enough dielectric properties of received films. For manufacturing of MDS-structure GaAs of n-type with an electron concentration 10/sup 14/-10/sup 16/ m/sup -3/, thickness /spl Gt/300 /spl mu/m was used. After clearing of the surface on a lamina GaAs a film of carbon was deposited. Thickness of the film is 6-40 nm. The subsequent technological operations reshaped MDS structure control. A welding rod of diameter from 0.2 up to 1 mm was made by a series spraying of chromium, copper and indium. The indium was sprayed on the back part of GaAs substrate. It served as the second contact of MDS-structure. At such a thickness of dielectric the MDS-structure represents an MDS-capacitor. The current-voltage characteristic looked like the usual characteristic of the metal-semiconductor contact. The currents were 100-150 /spl mu/A at voltage drop 1-3 V. Sometimes patterns had a linear current-voltage characteristic. We think this is connected with the large number of structural defects and disturbance in the field of an interphase boundary arising during a deposition of a film.