Simulation of the single-electron transistors based on different materials

Author

Abramov, I.I. ; Novik, E.G.

Author_Institution

Byelorussian State Univ. of Inf. & Radioelectron., Minsk, Byelorussia

fYear

1999

fDate

13-16 Sept. 1999

Firstpage

292

Lastpage

295

Abstract

The theoretical investigation of the constructive-technological and electrophysical parameters influencing the single-electron transistor characteristics (temperature of operation, frequency limit, current-voltage characteristic) is carried out. The single-electron device simulator SET-NANODEV was used for the investigations. The single-electron transistors based on different metals were considered. Behavior of the single-electron transistor characteristics depending on material and construction parameters was determined.

Keywords

semiconductor device models; single electron transistors; SET-NANODEV; construction parameters; current-voltage characteristic; electrophysical parameters; frequency limit; operation temperature; single-electron transistors; Ambient intelligence; Artificial intelligence; Chromium; Gold; Helium; IEEE catalog; Message-oriented middleware; Niobium compounds; Pulse width modulation; Single electron transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 1999. Microwave & Telecommunication Technology. 1999 9th International Crimean [In Russian with English abstracts]

Conference_Location

Sevastopol, Crimea, Ukraine

Print_ISBN

966-572-003-1

Type

conf

DOI

10.1109/CRMICO.1999.815242

Filename

815242