DocumentCode
3458280
Title
Modeling with resonant tunneling structure simulator RTS-NANODEV
Author
Abramov, L.I. ; Goncharenko, I.A. ; Danilyuk, A.L. ; Korolev, A.V.
Author_Institution
Byelorussian State Univ. of Inf. & Radioelectron., Minsk, Byelorussia
fYear
1999
fDate
13-16 Sept. 1999
Firstpage
296
Lastpage
299
Abstract
A simulator for resonant tunneling devices RTS-NANODEV is described. It consists of three units. The first unit is intended for calculation of the device transmission coefficient and current-voltage characteristic on the basis of various models. The simulation with the second unit is based on electrical models. The analysis of physical phenomena, which takes place in structures, is realized with the use of original models of new transport mechanisms, included in the third unit. Some simulation results are presented for demonstration of the simulator possibilities.
Keywords
digital simulation; resonant tunnelling devices; semiconductor device models; RTS-NANODEV simulator; current-voltage characteristic; device transmission coefficient; electrical models; resonant tunneling structure; transport mechanisms; Helium; IEEE catalog; Organizing; Resonant tunneling devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1999. Microwave & Telecommunication Technology. 1999 9th International Crimean [In Russian with English abstracts]
Conference_Location
Sevastopol, Crimea, Ukraine
Print_ISBN
966-572-003-1
Type
conf
DOI
10.1109/CRMICO.1999.815243
Filename
815243
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