DocumentCode
3458310
Title
Surface magnetism of silicon [111](7/spl times/7) and [001](2/spl times/1) surfaces: quantum-chemical approach
Author
Sheka, E.F. ; Nikitina, E.A. ; Aono, M.
Author_Institution
Russian People´´s Friendship Univ., Moscow, Russia
fYear
1999
fDate
13-16 Sept. 1999
Firstpage
302
Abstract
When discussing bare surfaces of silicon crystal, the concept of dangling bonds is widely used. The surface reconstruction is usually explained in terms of a tendency of the bonds to be saturated. However, the current microscopic calculations show that the availability of dangling bonds on the topmost silicon atoms is controversial enough.
Keywords
dangling bonds; elemental semiconductors; quantum chemistry; silicon; surface magnetism; surface reconstruction; Si; Si[001](2/spl times/1); Si[111](7/spl times/7); bare surfaces; dangling bonds; microscopic calculations; quantum-chemical approach; saturated bonds; surface magnetism; surface reconstruction; Ambient intelligence; Bonding; Chemical technology; Conductivity; Microscopy; Saturation magnetization; Silicon; Stationary state; Surface reconstruction; Tellurium;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1999. Microwave & Telecommunication Technology. 1999 9th International Crimean [In Russian with English abstracts]
Conference_Location
Sevastopol, Crimea, Ukraine
Print_ISBN
966-572-003-1
Type
conf
DOI
10.1109/CRMICO.1999.815245
Filename
815245
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