DocumentCode
3458323
Title
Voltage controlled SAW filters on 2DEG AlGaN/GaN heterostructures
Author
Grajal, Jesús ; Calle, Fernando ; Pedrós, Jorge ; Palacios, Tomás
Author_Institution
Departamento de Senales, Sistemas y Radiocomunicaciones, Univ. Politecnica de Madrid, Spain
Volume
1
fYear
2004
fDate
6-11 June 2004
Firstpage
387
Abstract
SAW devices fabricated on AlGaN/GaN 2DEG heterostructures may be used as a voltage controlled filters regarding the insertion losses. The control is performed through external voltages applied to the interdigital transducers. These filters could be integrated into future MMIC circuits based on AlGaN/GaN high electron mobility transistors.
Keywords
III-V semiconductors; aluminium compounds; surface acoustic wave devices; surface acoustic wave filters; transducers; voltage control; 2DEG AlGaN-GaN heterostructures; AlGaN-GaN; MMIC circuits; SAW devices; SAW filters; external voltages application; filter fabrication; filter integrated; high electron mobility transistor; insertion loss; interdigital transducers; tunable filters; voltage controlled filters; Aluminum gallium nitride; Circuits; Gallium nitride; HEMTs; Insertion loss; MMICs; SAW filters; Surface acoustic wave devices; Transducers; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2004 IEEE MTT-S International
ISSN
0149-645X
Print_ISBN
0-7803-8331-1
Type
conf
DOI
10.1109/MWSYM.2004.1335903
Filename
1335903
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