Title :
A broadband high efficiency class-AB LDMOS balanced power amplifier
Author :
Wu, L. ; Basaran, U. ; Dettmann, I. ; Berroth, M. ; Bitzer, T. ; Pascht, A.
Author_Institution :
Inst. of Electr. & Opt. Commun. Eng., Stuttgart Univ., Germany
Abstract :
In this paper, an LDMOS class-AB balanced power amplifier with a 3-dB bandwidth of 800 MHz at a center frequency of 2 GHz is presented. To the best of the authors´ knowledge, this is the largest bandwidth reported so far at these frequencies in an LDMOS technology. 50 Watt output power, high efficiency, high linearity and input-and output-matching better than -10 dB have been achieved over this large frequency band. An advanced stability improvement is introduced in this paper.
Keywords :
MOSFET circuits; power amplifiers; 2 GHz; 50 W; 800 MHz; class-AB LDMOS broadband balanced power amplifier; high efficiency; high linearity; input-output matching; stability improvement; Bandwidth; Broadband amplifiers; Frequency; High power amplifiers; Impedance matching; Optical amplifiers; Power amplifiers; Power generation; Semiconductor optical amplifiers; Stability;
Conference_Titel :
Microwave Conference, 2005 European
Print_ISBN :
2-9600551-2-8
DOI :
10.1109/EUMC.2005.1610117
