Measurement Method of Bond Strength for Silicon Direct Wafer Bonding

Author

Chen, Liguo ; Chen, Tao ; Sun, Lining

Author_Institution

Robotics Inst., Harbin Inst. of Technol.

fYear

2006

fDate

20-23 Aug. 2006

Firstpage

1021

Lastpage

1025

Abstract

A measurement system based on crack-opening method has been developed to measure the fracture toughness of silicon direct bonding wafers. The theory of crack-opening method was introduced and amended according to the shape of the specimen. The parameters and function required in the measurement of bond energy were mentioned. A new experimental device based on IR vision and image processing in the measurement was developed. Finally, a contrast experiment was carried out successfully and the error of the method was analyzed which validated the feasibility and the localization of the method

Keywords

cracks; elemental semiconductors; fracture toughness; ionisation potential; silicon; surface energy; wafer bonding; IR vision; bond strength measurement; crack-opening method; fracture toughness measurement; image processing; silicon direct wafer bonding; Atomic measurements; Energy measurement; Image processing; Robots; Shape; Silicon; Sun; Surface cracks; Testing; Wafer bonding; bonding strength; crack-opening; surface energy; wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Information Acquisition, 2006 IEEE International Conference on

Conference_Location

Weihai

Print_ISBN

1-4244-0528-9

Electronic_ISBN

1-4244-0529-7

Type

conf

DOI

10.1109/ICIA.2006.305878

Filename

4097811