DocumentCode
3458659
Title
Infrared thermal imaging without pixellation
Author
Dupont, E. ; Buchanan, M. ; Byloos, M. ; Gao, M. ; Song, C.-Y. ; Wasilewski, Z.R. ; Liu, H.C.
Author_Institution
Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada
fYear
2001
fDate
11-11 May 2001
Abstract
Summary form only given. A large pixel-less thermal imager based on the epitaxial integration of GaAs/AlGaAs quantum-well infrared photodetector and a GaAs light-emitting diode is demonstrated. The device transforms a mid-infrared (9 /spl mu/m) scene at to a near-infrared (0.82 /spl mu/m) image.
Keywords
III-V semiconductors; aluminium compounds; focal planes; gallium arsenide; infrared detectors; light emitting diodes; photodetectors; quantum well devices; 0.82 micron; 9 micron; GaAs-AlGaAs; QWIP-LED device; epitaxial integration; fill factor; infrared thermal imaging; large pixelless thermal imager; light-emitting diode; mid-infrared scene; near-infrared image; quantum well stack; quantum-well infrared photodetector; Charge coupled devices; Dry etching; Gallium arsenide; Gratings; Infrared imaging; Layout; Light emitting diodes; Optical imaging; Pixel; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-662-1
Type
conf
DOI
10.1109/CLEO.2001.948247
Filename
948247
Link To Document