Title :
Critical issues in plasma etching processes involved in the gate etch fabrication of CMOS devices
Author :
Joubert, O. ; Pargon, E. ; Detter, X. ; Cunge, G. ; Vallier, L.
Author_Institution :
Lab d´Electron. et de Technol. de l´Inf., CEA, Centre d´Etudes Nucleaires de Grenoble, France
Abstract :
Plasma processes involved in the fabrication of advanced CMOS devices become increasingly challenging. The increase in complexity comes from the introduction of new materials as well as the decrease in feature dimension. In this paper, we will briefly point out some of the most critical issues that we are facing nowadays at the front end level of the device fabrication.
Keywords :
CMOS integrated circuits; X-ray photoelectron spectra; passivation; photoresists; plasma diagnostics; process control; size control; sputter etching; CD control; CMOS devices; XPS analyses; critical issues; feature dimension; front end level; gate etch fabrication; materials introduction; plasma etching processes; resist trimming; CMOS process; Etching; Fabrication; Plasma applications; Plasma density; Plasma devices; Plasma diagnostics; Plasma materials processing; Plasma stability; Resists;
Conference_Titel :
Plasma- and Process-Induced Damage, 2003 8th International Symposium
Print_ISBN :
0-7803-7747-8
DOI :
10.1109/PPID.2003.1199719
