DocumentCode
3458669
Title
Influence of border traps on the determination of the minimum temperature coefficient current in high sensitivity MOS radiation dosimeters
Author
Sarrabayrouse, G. ; Gavelle, Mathieu ; Siskos, S.
Author_Institution
CNRS, Univ. de Toulouse, Toulouse, France
fYear
2009
fDate
6-8 Nov. 2009
Firstpage
1
Lastpage
5
Abstract
In this paper we examine the influence of the temperature on the instability of the response of thick oxide MOS radiation dosimeters due to border traps which is particularly important at high dose and we re-examine the validity of the method used to determine the MTC current value of irradiated dosimeters and the conclusion given previously.
Keywords
MIS devices; dosimeters; semiconductor counters; MTC current; border traps; high sensitivity MOS radiation dosimeters; minimum temperature coefficient current; Circuits and systems; Current measurement; Indium phosphide; Insulation; Ionizing radiation; MOSFETs; Temperature dependence; Temperature sensors; Threshold voltage; Uninterruptible power systems; MOS radiation dosimeter; accuracy; ionising radiation; temperature effects;
fLanguage
English
Publisher
ieee
Conference_Titel
Signals, Circuits and Systems (SCS), 2009 3rd International Conference on
Conference_Location
Medenine
Print_ISBN
978-1-4244-4397-0
Electronic_ISBN
978-1-4244-4398-7
Type
conf
DOI
10.1109/ICSCS.2009.5412458
Filename
5412458
Link To Document