Title :
Influence of border traps on the determination of the minimum temperature coefficient current in high sensitivity MOS radiation dosimeters
Author :
Sarrabayrouse, G. ; Gavelle, Mathieu ; Siskos, S.
Author_Institution :
CNRS, Univ. de Toulouse, Toulouse, France
Abstract :
In this paper we examine the influence of the temperature on the instability of the response of thick oxide MOS radiation dosimeters due to border traps which is particularly important at high dose and we re-examine the validity of the method used to determine the MTC current value of irradiated dosimeters and the conclusion given previously.
Keywords :
MIS devices; dosimeters; semiconductor counters; MTC current; border traps; high sensitivity MOS radiation dosimeters; minimum temperature coefficient current; Circuits and systems; Current measurement; Indium phosphide; Insulation; Ionizing radiation; MOSFETs; Temperature dependence; Temperature sensors; Threshold voltage; Uninterruptible power systems; MOS radiation dosimeter; accuracy; ionising radiation; temperature effects;
Conference_Titel :
Signals, Circuits and Systems (SCS), 2009 3rd International Conference on
Conference_Location :
Medenine
Print_ISBN :
978-1-4244-4397-0
Electronic_ISBN :
978-1-4244-4398-7
DOI :
10.1109/ICSCS.2009.5412458
