Title :
An accurate threshold voltage model for nanoscale GCGS VSG MOSFET
Author :
Abdelmalek, N. ; Djeffal, F. ; Abdi, M.A. ; Arar, D.
Author_Institution :
Dept. of Electron., Univ. of Batna, Batna, Algeria
Abstract :
In this paper, an accurate analytical threshold voltage model based on terms of surface potential is presented to study the scaling capability of nanoscale graded channel gate stack vertical surrounding gate (GCGS VSG MOSFET). Explicit approximate relations of surface potential and threshold voltage as function of device parameters are developed. The developed model is verified by its good agreement with the numerical simulations.
Keywords :
MOSFET; nanoelectronics; semiconductor device models; surface potential; analytical threshold voltage model; nanoscale GCGS VSG MOSFET; nanoscale graded channel gate stack MOSFET; nanoscale vertical surrounding gate MOSFET; numerical simulations; surface potential; threshold voltage; Analytical models; Circuits and systems; Doping; Leakage current; MOSFET circuits; Nanoscale devices; Poisson equations; Semiconductor process modeling; Threshold voltage; Tunneling; MOSFET; analytical model; nanoscale; threshold;
Conference_Titel :
Signals, Circuits and Systems (SCS), 2009 3rd International Conference on
Conference_Location :
Medenine
Print_ISBN :
978-1-4244-4397-0
Electronic_ISBN :
978-1-4244-4398-7
DOI :
10.1109/ICSCS.2009.5412459
