Ultrafast recovery times in implanted semiconductor saturable absorber mirrors at 1.5 /spl mu/m

Author

Gopinath, J.T. ; Thoen, E.R. ; Koontz, E.M. ; Grein, M.E. ; Kolodziejski, L.A. ; Ippen, E.P. ; Donnelly, J.P.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA

fYear

2001

fDate

11-11 May 2001

Abstract

Summary form only given. Recovery times as short as /spl sim/1 ps are obtained with proton bombardment of InGaAs/InP-based saturable absorbers without significantly changing the non-saturable logs. Under high excitation, recovery is found to be limited by slower intraband relaxation rates.

Keywords

III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; mirrors; optical saturable absorption; proton effects; semiconductor quantum wells; two-photon processes; 1 ps; 1.5 micron; InGaAs-InP; absorption bleaching; antireflection-coated layer; carrier capture; collinear degenerate cross-polarized pump-probe technique; differential reflectivity; distributed Bragg reflector; fluence-dependent dynamics; free-carrier absorption; high excitation; implanted mirrors; intraband relaxation rates; nonequilibrium absorption dynamics; proton bombardment; quantum wells; semiconductor saturable absorber mirrors; two-photon absorption; ultrafast recovery times; Absorption; Indium gallium arsenide; Mirrors; Nonlinear optics; Optical devices; Optical losses; Optical pumping; Optical saturation; Protons; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-662-1

Type

conf

DOI

10.1109/CLEO.2001.948250

Filename

948250