PIN diode characterization and modelling on SOI substrate for millimeter-wave applications

Author

Duraz, E. ; Ferrari, P. ; Duvillaret, L. ; Coutaz, J.-L. ; Duchamp, J.-M. ; Estebe, E. ; Ghesquiers, J.-P.

Volume

2

fYear

2005

fDate

4-6 Oct. 2005

Abstract

We present high frequency measurements, simulation and modeling of PIN diodes on silicon on insulator (SOI ) substrate from 40 MHz to 40 GHz and from 74 to 114 GHz. Comparison between simulations and measurements brings to the fore a frequency dependent PIN diode capacitance with reverse bias. We show that the free carriers injected in the diode intrinsic channel induce a frequency dependent complex permittivity of the silicon substrate that is responsible of the frequency behaviour of the PIN diode capacitance. Moreover, no adjustable parameter is required in this model as all the required parameters can be easily measured.

Keywords

millimetre wave diodes; p-i-n diodes; permittivity; semiconductor device models; silicon-on-insulator; 0.04 to 40 GHz; 74 to 114 GHz; PIN diode; SOI substrate; diode intrinsic channel; free carriers; frequency dependent capacitance; frequency dependent complex permittivity; millimeter-wave applications; silicon on insulator; Capacitance measurement; Conductivity; Coplanar waveguides; Frequency dependence; Frequency measurement; Microwave devices; Millimeter wave technology; Permittivity measurement; Semiconductor diodes; Silicon on insulator technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2005 European

Print_ISBN

2-9600551-2-8

Type

conf

DOI

10.1109/EUMC.2005.1610144

Filename

1610144