Circuit simulation model for a 100 A, 10 kV half-bridge SiC MOSFET/JBS power module

This paper presents the simulation of a 100 A, 10 kV silicon carbide (SiC) half-bridge power module operating at 20 kHz in a behavioral boost converter circuit. In the half-bridge power module, 10 kV SiC power MOSFETs are used as the upper and lower switches, where 10 kV SiC junction barrier Schottky (JBS) anti-parallel diodes along with 100 V silicon JBS series reverse-blocking diodes are used to protect the SiC MOSFETs from reverse conduction. The behavioral boost converter is designed to operate a single power switch and a single power diode for continuous 20 kHz hard switching conditions at 5 kV and 100 A. The test circuit contains the model for the 100 A, 10 kV SiC half-bridge power module where the upper MOSFET gate is turned off. The simulated waveforms demonstrate fast switch performance (<100 ns) with minimal turn-on current spikes resulting from charging the capacitances of the other MOSFET and JBS diodes in the module. The results also indicate that the combination of the 10 kV SiC JBS anti-parallel diode with the series low-voltage silicon JBS reverse-blocking diode is effective in protecting the SiC MOSFETs from reverse conduction.