New low reverse recovery charge (QRR) high-voltage silicon diodes provide higher efficiency than presently available ultrafast rectifiers

Author

Jovalusky, John

Author_Institution

Qspeed Semicond., Santa Clara, CA

fYear

2008

fDate

24-28 Feb. 2008

Firstpage

918

Lastpage

923

Abstract

A new generation of 600 V, Silicon rectifiers that have low reverse recovery charge (Qrr) and a high Softness factor are described. The new rectifiers can realize higher boost converter stage efficiency than any other available silicon diodes. This paper presents the characteristics of the new diodes and shows their performance in several application circuits. Relevant measurements, such as operating efficiency and component temperatures were observed and recorded, and are presented. Lastly, some useful techniques are described, that may help optimize CCM boost converter operation in order to maximize efficiency, when using diodes that have low Qrr and a high softness factor.

Keywords

elemental semiconductors; rectifiers; semiconductor diodes; silicon; Si; high softness factor; high-voltage silicon diodes; low reverse recovery charge; ultrafast rectifiers; Pulse width modulation converters; Rectifiers; Schottky diodes; Semiconductor diodes; Silicon carbide; Switches; Switching circuits; Switching converters; Temperature; Voltage; Reverse recovery charge (QRR); Silicon; Silicon Carbide (SiC); Softness factor; boost converter; continuous conduction mode (CCM); efficiency; power factor (PF); power factor correction (PFC); reverse recover current (IRR);

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition, 2008. APEC 2008. Twenty-Third Annual IEEE

Conference_Location

Austin, TX

ISSN

1048-2334

Print_ISBN

978-1-4244-1873-2

Electronic_ISBN

1048-2334

Type

conf

DOI

10.1109/APEC.2008.4522831

Filename

4522831