Impact on film bulk acoustic resonator tempco and quality factor from boron doped SiO2 temperature compensation material

Author

Zou, Qiong ; Small, Martha ; Lee, Daewoo ; Bi, Frank ; Snyder, R. ; Lamers, T.L. ; Choy, Jennifer ; Ruby, Rich

Author_Institution

Wireless Semicond. Div., Avago Technol., Inc., Fort Collins, CO, USA

fYear

2013

fDate

16-20 June 2013

Firstpage

1388

Lastpage

1391

Abstract

This paper presents a new boron doped SiO₂ temperature compensation material and its impact on FBAR TempCo characteristics, coupling coefficient k_t² and Quality factor Q. Compared with regular SiO₂ temperature compensation FBAR devices, boron doped SiO₂ temperature compensation FBAR devices show much higher positive TempCo effect and higher k_t². Positive TempCo effect can be optimized by adjusting B₂H₆ gas flow and boron content in boron doped SiO₂ film. FTIR Si-O peak has good correlation with FBAR TempCo performance and can be used to characterize and optimize TempCo material.

Keywords

Fourier transform spectra; Q-factor; acoustic resonators; boron; bulk acoustic wave devices; compensation; infrared spectra; silicon compounds; thermal expansion; thin film devices; FBAR TempCo characteristics; FTIR; SiO₂:B; coupling coefficient; film bulk acoustic resonator tempCo; quality factor; temperature compensation material; Boron; Film bulk acoustic resonators; Films; Fluid flow; Q-factor; Temperature; Boron doped SiO2; Film Bulk Acoustic Resonator (FBAR); temperature coefficient of frequency (TCF); temperature compensation (TempCo);

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII), 2013 Transducers & Eurosensors XXVII: The 17th International Conference on

Conference_Location

Barcelona

Type

conf

DOI

10.1109/Transducers.2013.6627037

Filename

6627037