Shear mode resonators based on aluminum nitride round membranes with a ring-shaped electrode

Author

Tran, A.T. ; Moh, T.S.Y. ; Pandraud, G. ; Schellevis, H. ; Akhnoukh, A. ; Sarro, P.M.

Author_Institution

Lab. of Electron. Components, Technol. & Mater. (ECTM), Delft Univ. of Technol., Delft, Netherlands

fYear

2013

fDate

16-20 June 2013

Firstpage

1396

Lastpage

1399

Abstract

We report a novel shear mode resonator excited by lateral field using an AlN/SiN membrane structure, for mass sensing applications. The shear acoustic wave was clearly observed using a ring-shaped electrode structure on a round membrane made of a very low stress (~ 50 MPa) and very thin (~ 970 nm) AlN film. A significant frequency shift (around 7 MHz) generated when dropping particles as loading masses on the surface of the devices, was measured, demonstrating the potential of these devices for mass sensing applications.

Keywords

acoustic resonators; aluminium compounds; mass measurement; micromechanical resonators; quartz crystal microbalances; silicon compounds; thin film sensors; AlN-SiN; frequency shift; lateral field; mass measurement; mass sensing application; ring shaped electrode structure; round membrane structure; shear acoustic wave; shear mode resonator; thin film; Electrodes; Films; III-V semiconductor materials; Liquids; Loading; Sensors; Silicon compounds; AlN; ring-shape electrode; shear mode resonators;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII), 2013 Transducers & Eurosensors XXVII: The 17th International Conference on

Conference_Location

Barcelona

Type

conf

DOI

10.1109/Transducers.2013.6627039

Filename

6627039