Emerging role of semiconductor process equipment to overcome device failure mechanisms

With the recent dramatic drop in DRAM prices, along with a relentless increase in microprocessor speed, has come an ambitious, do-or-die industry wide transition to 0.25 μm technology and soon, 300 mm wafer size. This paper highlights the role of newly developed process equipment capabilities to overcome certain failure mechanisms in 0.25 μm enabling device structures such as Shallow Trench Isolation (STI), low RC polysilicide gates, low thermal budget pre-metal dielectrics, high κ storage capacitors, low resistance contact plugs, low capacitance intermetal dielectrics and fine line interconnects