Title :
Scaling down of tunnel oxynitride in NAND flash memory: oxynitride selection and reliabilities
Author :
Kim, Jonghan ; Choi, Jung Dal ; Shin, Wang Chul ; Kim, Dong Jun ; Kim, Hong Soo ; Mang, Kyong Moo ; Ahn, Sung Tae ; Kwon, Oh Hyun
Author_Institution :
Samsung Electron. Co. Ltd., Kyungki, South Korea
Abstract :
The selection of a manufacturable furnace-grown oxynitride process and reliability issues of the scaled tunnel oxide are examined. As the oxide thickness is scaled down, the cycling endurance, read life time and program disturb characteristics in a NAND flash memory with the tunnel oxynitride are improved compared to the conventional dry oxide
Keywords :
CMOS memory circuits; EPROM; NAND circuits; integrated circuit reliability; nitridation; oxidation; tunnelling; 5 to 9 nm; 850 C; N2O; N2O nitridation; NAND flash memory; Si-SiON; cycling endurance; double level polysilicon CMOS process; flash EEPROM; manufacturable furnace-grown oxynitride process; oxynitride selection; program disturb characteristics; read life time; reliability issues; tunnel oxynitride scaling down; Degradation; Dielectrics; EPROM; Fabrication; Manufacturing processes; Nitrogen; Nonvolatile memory; Oxidation; Semiconductor device manufacture; Semiconductor device reliability;
Conference_Titel :
Reliability Physics Symposium, 1997. 35th Annual Proceedings., IEEE International
Conference_Location :
Denver, CO
Print_ISBN :
0-7803-3575-9
DOI :
10.1109/RELPHY.1997.584220
