Title :
Characterization and modeling of a highly reliable metal-to-metal antifuse for high-performance and high-density field-programmable gate arrays
Author :
Shih, Chih-Ching ; Lambertson, Roy ; Hawley, Frank ; Issaw, F. ; McCollum, John ; Hamdy, Esmat ; Sakurai, Hiroshi ; Yuasa, Hiroshi ; Honda, Hirotsugu ; Yamaoka, Tohru ; Wada, Tetsuaki ; Hu, Chenming
Author_Institution :
Actel Corp., Sunnyvale, CA, USA
Abstract :
The reliability of a new amorphous silicon/dielectric antifuse is characterized and modeled. Unprogrammed antifuse leakage and time-to-breakdown are functions not only of applied voltage but also of stressing polarity and temperature. Both breakdown and leakage criteria are used to investigate their effects on time-to-fail. A thermal model incorporates the effects of programming and stress currents, ambient temperature, and variation of antifuse resistance with temperature. The measured temperature dependence of antifuse resistance is used for the first time to derive key physical parameters in the model
Keywords :
CMOS integrated circuits; electric breakdown; electric fuses; failure analysis; field programmable gate arrays; integrated circuit modelling; integrated circuit reliability; leakage currents; Si; ambient temperature; amorphous silicon/dielectric antifuse; antifuse resistance; breakdown criteria; high-density field-programmable gate arrays; leakage criteria; metal-to-metal antifuse; modeling; reliability; stress currents; stressing polarity; temperature dependence; thermal model; time-to-breakdown; time-to-fail; triple-level CMOS process; unprogrammed antifuse leakage; Amorphous silicon; Dielectrics; Electric breakdown; Electrical resistance measurement; Temperature dependence; Temperature measurement; Thermal resistance; Thermal stresses; Time measurement; Voltage;
Conference_Titel :
Reliability Physics Symposium, 1997. 35th Annual Proceedings., IEEE International
Conference_Location :
Denver, CO
Print_ISBN :
0-7803-3575-9
DOI :
10.1109/RELPHY.1997.584227
