DocumentCode :
3459972
Title :
De-embedding effects on HBT device performance
Author :
Choudhury, Debabani ; Madhav, Meena ; Wetzel, Michael D. ; Jensen, Joseph F.
Author_Institution :
HRL Labs., LLC, Malibu, CA, USA
fYear :
2003
fDate :
4-5 Dec. 2003
Firstpage :
259
Lastpage :
264
Abstract :
This paper presents a de-embedding approach for modeling of high frequency devices on finite thickness substrates with no via holes. Mounting of finite thickness wafers on high-performance substrates eliminated the problem of resonance observed during TRL calibration. This calibration approach de-embeds the pad launcher parasitics for devices on finite thickness wafers without vias correctly up to hundreds of GHz. Experiments demonstrate that, accurate high-frequency de-embedding helps to improve the fT and fmax values of HBT devices.
Keywords :
heterojunction bipolar transistors; semiconductor device models; HBT device performance; TRL calibration; deembedding effects; finite thickness substrate; heterojunction bipolar transistor; high frequency device modeling; pad launcher parasitics; via hole; wafer mounting; Calibration; Distortion measurement; Equivalent circuits; Frequency measurement; Heterojunction bipolar transistors; Indium phosphide; Millimeter wave measurements; Radio frequency; Scattering parameters; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Measurements Conference, 2003. Fall 2003. 62nd ARFTG
Print_ISBN :
0-7803-8195-5
Type :
conf
DOI :
10.1109/ARFTGF.2003.1459784
Filename :
1459784
Link To Document :
بازگشت