• DocumentCode
    3459972
  • Title

    De-embedding effects on HBT device performance

  • Author

    Choudhury, Debabani ; Madhav, Meena ; Wetzel, Michael D. ; Jensen, Joseph F.

  • Author_Institution
    HRL Labs., LLC, Malibu, CA, USA
  • fYear
    2003
  • fDate
    4-5 Dec. 2003
  • Firstpage
    259
  • Lastpage
    264
  • Abstract
    This paper presents a de-embedding approach for modeling of high frequency devices on finite thickness substrates with no via holes. Mounting of finite thickness wafers on high-performance substrates eliminated the problem of resonance observed during TRL calibration. This calibration approach de-embeds the pad launcher parasitics for devices on finite thickness wafers without vias correctly up to hundreds of GHz. Experiments demonstrate that, accurate high-frequency de-embedding helps to improve the fT and fmax values of HBT devices.
  • Keywords
    heterojunction bipolar transistors; semiconductor device models; HBT device performance; TRL calibration; deembedding effects; finite thickness substrate; heterojunction bipolar transistor; high frequency device modeling; pad launcher parasitics; via hole; wafer mounting; Calibration; Distortion measurement; Equivalent circuits; Frequency measurement; Heterojunction bipolar transistors; Indium phosphide; Millimeter wave measurements; Radio frequency; Scattering parameters; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Measurements Conference, 2003. Fall 2003. 62nd ARFTG
  • Print_ISBN
    0-7803-8195-5
  • Type

    conf

  • DOI
    10.1109/ARFTGF.2003.1459784
  • Filename
    1459784