Using IDDQ drift testing to detect hydrogen in MOS devices

This paper will show how I_DDQ drift testing was used to detect hydrogen in BiCMOS IC´s. The paper will provide mobile ion testing results, using several methods, to show that there were very few mobile ions in the IC´s to account for the drift. The paper will then show wafer level reliability (WLR) test data to support the conclusion that hydrogen is in the IC. I_DDQ drift testing will show that sodium is not the cause of the drift but the drift is due to hydrogen. The paper will than present a model of how hydrogen causes I_DDQ drift. The model is based upon the hydrogen compensation of boron. I_DDQ drift testing will then be used to evaluate an experiment involving different forming gas alloy times and temperatures. The I_DDQ drift test results of this experiment show that as the alloy time and temperature are increased the incorporation of hydrogen in the IC is increased