Temperature cycling and thermal shock failure rate modeling

Author

Blish, Richard C., II

Author_Institution

Adv. Micro Devices Inc., Sunnyvale, CA, USA

fYear

1997

fDate

8-10 Apr 1997

Firstpage

110

Lastpage

117

Abstract

Combining the Coffin-Manson formula with a lognormal distribution continues to be an effective method to model the effects of thermal stressing upon VLSI IC package reliability. This approach is applied to Thin Film Cracking (TFC) and several other failure mechanisms relevant to IC packages. The Coffin-Manson exponent, m, is found to lie in one of three relatively narrow ranges: m for ductile metal fatigue is ~1-3 m for commonly used IC metal alloys and intermetallics is ~3-5, while m for brittle fracture is ~6-8

Keywords

VLSI; failure analysis; integrated circuit packaging; integrated circuit reliability; log normal distribution; reliability theory; thermal stress cracking; Coffin-Manson exponent; VLSI IC package reliability; brittle fracture; ductile fatigue; intermetallic; log-normal distribution; metal alloy; temperature cycling; thermal shock failure rate model; thermal stressing; thin film cracking; Electric shock; Failure analysis; Fatigue; Integrated circuit modeling; Integrated circuit packaging; Intermetallic; Temperature; Thermal stresses; Transistors; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1997. 35th Annual Proceedings., IEEE International

Conference_Location

Denver, CO

Print_ISBN

0-7803-3575-9

Type

conf

DOI

10.1109/RELPHY.1997.584246

Filename

584246