Title :
Device degradation due to stud bumping above the MOSFET region and the effect of annealing on the degradation
Author :
Shimoyama, Nobuhiro ; Machida, Katsuyuki ; Shimaya, Masakazu ; Akiya, Hideo ; Kyuragi, Hakaru
Author_Institution :
NTT Syst. Electron. Lab., Kanagawa, Japan
Abstract :
This paper presents the effect of stud bumping above the MOSFET region on device degradation. Stud bumping above the MOSFET region generates an interface trap at the Si/SiO2 interface and results in the degradation of mutual conductance for the N-channel MOSFET. The interface traps induced by stud bumping are apparently eliminated by both N2 and H2 annealing. However, the hot-carrier tolerance of H2 annealing is one order of magnitude stronger than that of N2 annealing. This effect is explained by terminating dangling bonds with hydrogen atoms
Keywords :
MOSFET; annealing; dangling bonds; hot carriers; interface states; semiconductor device packaging; semiconductor device reliability; H2; N-channel MOSFET; N2; Si-SiO2; annealing; dangling bonds; device degradation; hot carriers; interface traps; mutual conductance; stud bumping; Aluminum; Annealing; Bonding forces; Degradation; Gold; Large scale integration; MOSFET circuits; Power MOSFET; Stress; Transconductance;
Conference_Titel :
Reliability Physics Symposium, 1997. 35th Annual Proceedings., IEEE International
Conference_Location :
Denver, CO
Print_ISBN :
0-7803-3575-9
DOI :
10.1109/RELPHY.1997.584247
