Effects of the polymeric dielectric on OTFT performances

Author

Petrosino, Mario ; Rubino, Alfredo ; Miscioscia, Riccardo ; Del Mauro, Anna De Girolamo ; Minarini, Carla

Author_Institution

Dept. of Inf. & Electr. Eng., Univ. of Salerno, Salerno, Italy

fYear

2009

fDate

6-8 Nov. 2009

Firstpage

1

Lastpage

4

Abstract

Three polymers have been tested as gate dielectric in pentacene-OTFTs: polyimide, polystyrene and commercial photoresist. The electrical characterizations revealed a gate leakage current and the effects of source and drain contact barriers both responsible of the non-crossing of the curves into the I_S-V_DS diagram origin. An electrical model have been proposed taking into account the gate leakage current and the V_DS shift by inserting two gate-diodes and a voltage source. The model has allowed to estimate the correct values of the channel mobility and the device voltage threshold.

Keywords

carrier mobility; dielectric materials; leakage currents; organic field effect transistors; polymers; thin film transistors; OTFT performance; channel mobility; commercial photoresist; contact barrier; device voltage threshold; electrical model; gate dielectric; gate leakage current; pentacene OTFT; polyimide; polymeric dielectric; polystyrene; Contacts; Dielectrics; Leakage current; Organic thin film transistors; Polyimides; Polymers; Resists; Testing; Thin film transistors; Voltage; OTFT; electrical modelling; mobility; pentacene; polymer dielectric;

fLanguage

English

Publisher

ieee

Conference_Titel

Signals, Circuits and Systems (SCS), 2009 3rd International Conference on

Conference_Location

Medenine

Print_ISBN

978-1-4244-4397-0

Electronic_ISBN

978-1-4244-4398-7

Type

conf

DOI

10.1109/ICSCS.2009.5412549

Filename

5412549