DocumentCode :
3460274
Title :
Experiment and Theory for the Thickness Effect of Nano Metal Oxide Gas Sensing Thin Film The Thickness Effect and Mesoscopic Theory of Conductance Activity Energy
Author :
Jianping, Xing ; Qinghua, Yuan ; Donghua, Li ; Honglang, Lu ; Nanwan, Qiu
Author_Institution :
Sch. of Inf. Sci. & Eng., Shandong Univ., Ji´´nan
fYear :
2006
fDate :
20-23 Aug. 2006
Firstpage :
1460
Lastpage :
1464
Abstract :
The characteristics of conductance activity energy of SnO2 thin film varies with film thickness l and grain size r0 are given by experiment results. The cross-section current formula of porous materials and the conductance formula of gas sensing thin film with adsorbed oxygen negative ion are given. The mesoscopic theory of nano-thin film conductance activity energy was proposed, and using the corrected Fermi statistic formula for the concentration of adsorbed negative ion, the theoretical curve of Eact varies with grain size r0 yield; from which, the related problems are discussed.
Keywords :
Fermi level; electrical conductivity; gas sensors; grain size; mesoscopic systems; nanostructured materials; porous semiconductors; semiconductor thin films; statistical analysis; thin film sensors; tin compounds; Fermi statistic formula; SnO2; adsorbed oxygen negative ion concentration; grain size; mesoscopic theory; nano metal oxide gas sensing thin film; nanothin film conductance activity energy characteristics; porous materials; thickness effect; Annealing; Conducting materials; Conductive films; Grain size; Information science; Physics; Power engineering and energy; Statistics; Temperature; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Information Acquisition, 2006 IEEE International Conference on
Conference_Location :
Shandong
Print_ISBN :
1-4244-0528-9
Electronic_ISBN :
1-4244-0529-7
Type :
conf
DOI :
10.1109/ICIA.2006.305972
Filename :
4097905
Link To Document :
بازگشت