Title :
Evidence of electron-hole cooperation in SiO2 dielectric breakdown
Author :
Satake, Hideki ; Takagi, Shin-ichi ; Toriumi, Akira
Author_Institution :
ULSI Res. Center, Toshiba Corp., Kawasaki, Japan
Abstract :
It has been experimentally proved that the coexistence of hot electrons and holes is essential for dielectric breakdown in SiO2 . In order to quantitatively investigate the roles of hot electrons and holes in dielectric breakdown of SiO2, we evaluated the charge to breakdown, Qbd, and the total hole fluence to breakdown, Qp, by separately controlling the amounts of injected electrons and holes with the substrate hot hole (SHH) injection method. This paper is the first report that quantitatively points out the necessity for cooperation of hot electrons and holes in dielectric breakdown in SiO2
Keywords :
electric breakdown; hot carriers; silicon compounds; SiO2; charge to breakdown; dielectric breakdown; electron-hole cooperation; hot electrons; hot holes; substrate hot hole injection; total hole fluence to breakdown; Charge carrier processes; Dielectric breakdown; Dielectric substrates; Hot carriers; Laboratories; MOSFET circuits; Silicon; Substrate hot electron injection; Ultra large scale integration; Voltage control;
Conference_Titel :
Reliability Physics Symposium, 1997. 35th Annual Proceedings., IEEE International
Conference_Location :
Denver, CO
Print_ISBN :
0-7803-3575-9
DOI :
10.1109/RELPHY.1997.584253
