Investigation of oxide charge trapping and detrapping in a n-MOSFET

Author

Wang, Tahui ; Chang, Tse-En ; Chiang, L.P. ; Zhous, N.K. ; Huang, C.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

1997

fDate

8-10 Apr 1997

Firstpage

164

Lastpage

168

Abstract

Oxide hole and electron trapping/detrapping characteristics in a hot carrier stressed n-MOSFET were investigated by monitoring the temporal evolution of band-to-band tunneling current. Both the hole and electron detrapping induced GIDL current transients were observed for the first time in the same device. The obtained field dependence of oxide charge detrapping time indicates that trapezoidal barrier tunneling is a major mechanism in both hole and electron detrapping. A trap assisted sequential tunneling model for hole detrapping was used to match the measured trap time constants

Keywords

MOSFET; electron traps; hole traps; hot carriers; semiconductor device models; semiconductor device reliability; semiconductor-insulator boundaries; tunnelling; GIDL current transients; NMOSFET; band-to-band tunneling current; field dependence; hot carrier stress; n-MOSFET; n-channel MOSFET; oxide charge detrapping; oxide charge trapping; trap assisted sequential tunneling model; trapezoidal barrier tunneling; tunneling current monitoring; CMOS technology; Charge carrier processes; Charge measurement; Current measurement; Electron traps; Hot carriers; MOSFET circuits; Stress; Threshold voltage; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1997. 35th Annual Proceedings., IEEE International

Conference_Location

Denver, CO

Print_ISBN

0-7803-3575-9

Type

conf

DOI

10.1109/RELPHY.1997.584254

Filename

584254