A 100W high-efficiency GaN HEMT amplifier for S-Band wireless system

Author

Maekawa, Arata ; Nagahara, Masaki ; Yamamoto, Takashi ; Sano, Seigo

Author_Institution

Eudyna Devices Inc., Japan

Volume

3

fYear

2005

fDate

4-6 Oct. 2005

Abstract

We have successfully developed a 100W AlGaN/GaN power amplifier with a bandwidth of 300MHz in S-band, operating at 50V drain bias voltage. This amplifier consists of one HEMT die developed for L/S-band frequency operation and a single-ended package. The developed amplifier has an output power of 100W and a high linear gain of more than 13.5dB in the frequency range of 2.6GHz to 2.9GHz under CW or pulsed conditions [200usec (pulse width) and 2msec(period)]. High drain efficiency of 58% was also achieved at an output power of 100W and frequency of 2.8GHz. To the best of our knowledge this is the first report of 100W AlGaN/GaN HEMT amplifier developed for S-band high power application.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; microwave power amplifiers; power HEMT; wide band gap semiconductors; 100 W; 2.6 to 2.9 GHz; 300 MHz; 50 V; AlGaN-GaN; HEMT amplifier; S-band wireless system; power amplifier; Aluminum gallium nitride; Bandwidth; Frequency; Gallium nitride; HEMTs; High power amplifiers; Power amplifiers; Power generation; Pulse amplifiers; Space vector pulse width modulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2005 European

Print_ISBN

2-9600551-2-8

Type

conf

DOI

10.1109/EUMC.2005.1610221

Filename

1610221