Title :
Accelerated gate-oxide breakdown in mixed-voltage I/O circuits
Author :
Furukawa, T. ; Turner, D. ; Mittl, S. ; Maloney, M. ; Serafin, R. ; Clark, W. ; Bialas, J. ; Longenbach, L. ; Howard, J.
Author_Institution :
Microelectron. Div., IBM Corp., Essex Junction, VT, USA
Abstract :
This paper describes a new mechanism of gate-oxide breakdown fails observed in mixed-voltage I/O circuits during an accelerated product stress. Although no gate-oxide breakdown was expected from Fowler-Nordheim stress, gate-oxide fails were observed only in short-channel PMOSFETs of the mixed-voltage I/O circuits. Accelerated gate-oxide breakdown was attributed to non-conductive channel hot-electron injection at the drain edge
Keywords :
CMOS integrated circuits; MOSFET; dielectric thin films; electric breakdown; failure analysis; hot carriers; integrated circuit reliability; life testing; semiconductor device reliability; accelerated gate-oxide breakdown; accelerated product stress; drain edge; mixed-voltage I/O circuits; nonconductive channel hot-electron injection; p-channel MOSFET; reliability stress failures; short-channel PMOSFETs; Acceleration; Boron; CMOS technology; Capacitance; Channel hot electron injection; Circuit testing; Electric breakdown; Microelectronics; Stress; Temperature;
Conference_Titel :
Reliability Physics Symposium, 1997. 35th Annual Proceedings., IEEE International
Conference_Location :
Denver, CO
Print_ISBN :
0-7803-3575-9
DOI :
10.1109/RELPHY.1997.584255
