Analysis and design of a 200 W LDMOS based Doherty amplifier for 3 G base stations

Author

Gajadharsing, John R. ; Bosma, Olof ; Van Westen, Pim

Author_Institution

BU Mobile Commun., Philips Semicond., Nijmegen, Netherlands

Volume

2

fYear

2004

fDate

6-11 June 2004

Firstpage

529

Abstract

In this paper the analysis and design of a 200 W classical Doherty amplifier is described using discrete LDMOS devices. The peak (class-C) and main (class-AB) amplifiers are designed with two stages to obtain flat AM-AM and AM-PM characteristics for the Doherty amplifier. An asymmetrical planar coupler structure is utilized as an input splitter and microstrip based elements are used for phase matching and power combining at the output. This Doherty PA has a measured P1 dB of 53 dBm and exhibits an efficiency of 34% at 6 dB backoff (47 dBm) for two-carrier WCDMA. The ACPR and IM3 obtained at 47 dBm are 37 dBc and 33 dBc respectively. The gain at 6 dB backoff is 22 dB over the frequency range 2.11-2.17 GHz. Design considerations for a Doherty amplifier based on discrete LDMOS devices are addressed.

Keywords

MOSFET; amplitude modulation; code division multiple access; microstrip couplers; phase modulation; power amplifiers; semiconductor device models; 2.11 to 2.17 GHz; 200 W; 200 W LDMOS based Doherty amplifier design; 22 dB; 3 G base stations; 6 dB; AM-AM properties; AM-PM properties; asymmetrical planar coupler structure; class AB amplifiers; class C amplifiers; microstrip based elements; phase matching; two-carrier WCDMA; 3G mobile communication; Base stations; Energy consumption; Frequency conversion; Multiaccess communication; Operational amplifiers; Power amplifiers; Power generation; Semiconductor optical amplifiers; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2004 IEEE MTT-S International

ISSN

0149-645X

Print_ISBN

0-7803-8331-1

Type

conf

DOI

10.1109/MWSYM.2004.1336032

Filename

1336032