DocumentCode :
3460397
Title :
Can silicon catch the millimeter wave?
Author :
Long, John R.
Author_Institution :
Electron. Res. Lab., DIMES Delft Univ. of Technol., Netherlands
Volume :
3
fYear :
2005
fDate :
4-6 Oct. 2005
Abstract :
Transceiver designs implemented in silicon technology are most competitive in design cycle-time and performance versus cost when compared to other technologies. Scaling is driving silicon technology towards gain-band-widths of 300GHz, enabling circuits operating deep into mm-wave frequency bands (i.e., well above 30 GHz). However, innovations in on-chip passive design and construction being pioneered in mixed-signal silicon technologies may be the real technology enablers at these frequencies. Relevant examples are presented from the author´s own work and the literature.
Keywords :
integrated circuit design; millimetre wave integrated circuits; silicon; transceivers; integrated circuits; millimeter wave; mixed-signal silicon technologies; on-chip passive design; radio frequency; wireless communication transceivers; Attenuation; Bandwidth; Integrated circuit interconnections; Integrated circuit technology; Millimeter wave communication; Millimeter wave technology; Radio frequency; Radiofrequency integrated circuits; Silicon; Transceivers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2005 European
Print_ISBN :
2-9600551-2-8
Type :
conf
DOI :
10.1109/EUMC.2005.1610227
Filename :
1610227
Link To Document :
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