Title :
Via delamination-a novel electromigration failure mechanism
Author :
Lee, Y. -H ; Wu, K. ; Mielke, N. ; Ma, L.J. ; Hui, S.
Author_Institution :
Intel Corp., Santa Clara, CA, USA
Abstract :
Via delamination, a novel electromigration failure mechanism, has been investigated and understood. The mass transport model, in conjunction with environmental, thermal, and mechanical stresses was proposed to explain this failure mechanism. Process enhancements, which include lowering the thin film stresses and strengthening the adhesion between the tungsten plug/metal stack and metal/inter-level dielectric interfaces, have effectively eliminated this reliability failure mode
Keywords :
delamination; electromigration; failure analysis; metallisation; W; adhesion; electromigration failure; environmental stress; mass transport model; mechanical stress; metal/inter-level dielectric interface; reliability; thermal stress; thin film; tungsten plug/metal stack interface; via delamination; Adhesives; Delamination; Dielectric thin films; Electromigration; Failure analysis; Plasma temperature; Plugs; Thermal stresses; Tin; Tungsten;
Conference_Titel :
Reliability Physics Symposium, 1997. 35th Annual Proceedings., IEEE International
Conference_Location :
Denver, CO
Print_ISBN :
0-7803-3575-9
DOI :
10.1109/RELPHY.1997.584261
