DocumentCode
3460448
Title
Recent problems in electromigration testing
Author
Baerg, Bill
Author_Institution
Intel Corp., Santa Clara, CA, USA
fYear
1997
fDate
8-10 Apr 1997
Firstpage
211
Lastpage
215
Abstract
Electromigration testing requires specialized structures for interconnections which use Al(Cu) shunted by refractory layers and terminated with tungsten-filled vias or contacts. Phenomena which may need to be taken into account include temperature gradients, reservoirs, via delamination and extrusions. Six examples of test structures which gave unanticipated results as a consequence of these behaviors are discussed
Keywords
aluminium alloys; copper alloys; electromigration; integrated circuit interconnections; integrated circuit testing; Al(Cu) interconnection; Al-Cu; W; contact; electromigration testing; extrusion; refractory shunt layer; reservoir; temperature gradient; tungsten-filled via; via delamination; Aluminum; Bonding; Copper; Electromigration; Plugs; Reservoirs; Temperature; Testing; Titanium; Tungsten;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1997. 35th Annual Proceedings., IEEE International
Conference_Location
Denver, CO
Print_ISBN
0-7803-3575-9
Type
conf
DOI
10.1109/RELPHY.1997.584262
Filename
584262
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