Title :
Recent problems in electromigration testing
Author_Institution :
Intel Corp., Santa Clara, CA, USA
Abstract :
Electromigration testing requires specialized structures for interconnections which use Al(Cu) shunted by refractory layers and terminated with tungsten-filled vias or contacts. Phenomena which may need to be taken into account include temperature gradients, reservoirs, via delamination and extrusions. Six examples of test structures which gave unanticipated results as a consequence of these behaviors are discussed
Keywords :
aluminium alloys; copper alloys; electromigration; integrated circuit interconnections; integrated circuit testing; Al(Cu) interconnection; Al-Cu; W; contact; electromigration testing; extrusion; refractory shunt layer; reservoir; temperature gradient; tungsten-filled via; via delamination; Aluminum; Bonding; Copper; Electromigration; Plugs; Reservoirs; Temperature; Testing; Titanium; Tungsten;
Conference_Titel :
Reliability Physics Symposium, 1997. 35th Annual Proceedings., IEEE International
Conference_Location :
Denver, CO
Print_ISBN :
0-7803-3575-9
DOI :
10.1109/RELPHY.1997.584262
