Title :
Effect of Al-W intermetallic compounds on electromigration in Al/CVD-W interconnects
Author :
Sekiguchi, Mitsuru ; Yamanaka, Michinari ; Mayumi, Shuichi
Author_Institution :
Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
Abstract :
In the Al/CVD-W lines with W oxide at Al/W interface, electromigration life time becomes 10 times longer than that of the lines without W oxide. In the lines with W oxide, Al2(WO3)4 and WAl5 formation suppressed WAl12 formation during annealing at 450°C, and WAl5 is formed at Al grain boundary. Activation energy measurement shows grain boundary diffusion is suppressed in the lines with W oxide. Plasma nitridation of W surface prevents these intermetallic compounds formation during annealing, but it causes a nonuniform Al grain growth, which hinders the improvement in electromigration
Keywords :
CVD coatings; aluminium; annealing; electromigration; grain boundary diffusion; grain growth; integrated circuit interconnections; integrated circuit metallisation; nitridation; tungsten; 450 C; Al-W; Al-W intermetallic compound; Al/CVD-W bilayer interconnect; Al/W interface; W oxide; activation energy; annealing; electromigration lifetime; grain boundary diffusion; grain growth; plasma nitridation; Annealing; Artificial intelligence; Electromigration; Etching; Intermetallic; Plasma applications; Plasma temperature; Sputtering; Surface resistance; Tin;
Conference_Titel :
Reliability Physics Symposium, 1997. 35th Annual Proceedings., IEEE International
Conference_Location :
Denver, CO
Print_ISBN :
0-7803-3575-9
DOI :
10.1109/RELPHY.1997.584264
