An accurate two dimensional threshold voltage model for nanoscale GCGS DG MOSFET including traps effects

There is no doubt that nanoelectronics based applications are the workhorse of the next industrial revolution, such importance has induced an accelerated research towards novel models governing behavior aspects of nanoscale components. Despite the proved advantages of GCGS DG MOSFET´s topology, challenges continue to occur particularly concerning from a part model´s accuracy and from another part reliability of new invented devices. This paper explores the surface -potential -based approach to derive an analytical threshold voltage model for nanoscale GCGS DG MOSFET at low drain-source voltage. Our obtained results showed considerable improvement compared to conventional DG MOSFETs. Followed steps presented herein may provide guidance and orientation needed for meaningful reliability measurements related to immunity of nanoscale DG MOSFETs against the hot-carrier degradation effects.