The effect of hot electron stress on the DC and microwave characteristics of GaAs-PHEMTs and InP-HEMTs

Author

Menozzi, R. ; Borgarino, M. ; Cova, P. ; Baeyens, Y. ; Hove, M. Van ; Fantini, F.

Author_Institution

Dipt. di Ingegneria dell´´Inf., Parma Univ., Italy

fYear

1997

fDate

8-10 Apr 1997

Firstpage

242

Lastpage

247

Abstract

This work reports on hot electron stress experiments performed on SiN passivated AlGaAs-InGaAs-GaAs pseudomorphic HEMTs and InAlAs-InGaAs-InP lattice-matched HEMTs. We study the effects of the stress on both the device DC and RF characteristics, and investigate their correlation. In both the GaAs and InP HEMTs the high drain bias, room temperature hot electron stress produces some permanent change of the DC and RF characteristics which can be attributed to charge trapping phenomena

Keywords

III-V semiconductors; S-parameters; gallium arsenide; high electron mobility transistors; hot carriers; indium compounds; microwave field effect transistors; semiconductor device reliability; AlGaAs-InGaAs-GaAs; DC characteristics; GaAs PHEMTs; InAlAs-InGaAs-InP; InP HEMTs; RF characteristics; SiN; SiN passivation; charge trapping phenomena; high drain bias; hot electron stress; lattice-matched HEMTs; microwave characteristics; pseudomorphic HEMTs; Electrons; Gallium arsenide; HEMTs; Indium phosphide; MODFETs; Microwave devices; PHEMTs; Radio frequency; Silicon compounds; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1997. 35th Annual Proceedings., IEEE International

Conference_Location

Denver, CO

Print_ISBN

0-7803-3575-9

Type

conf

DOI

10.1109/RELPHY.1997.584267

Filename

584267