Title :
An empirical lifetime projection method for laser diode degradation
Author :
Hwang, Nam ; Kang, Seung-Goo ; Lee, Hee-Tae ; Park, Seong-Su ; Song, Min-Kyu ; Pyun, Kwang-Eui
Author_Institution :
Compound Semicond. Res. Dept., Electron. & Telecommun. Res. Inst., Taejeon, South Korea
Abstract :
An empirical method for lifetime projection of 1.55 μm InGaAs-InP MQW-DFB laser diodes (LD) is presented. On the basis of experimental results of an accelerated aging test for 1500 hours, relationship between LD degradation, operating voltage, and ambient temperature has been determined. The presented method makes it possible to predict the lifetime of LDs by determining the thermal voltage ratio
Keywords :
III-V semiconductors; ageing; distributed feedback lasers; gallium arsenide; indium compounds; laser transitions; life testing; quantum well lasers; semiconductor device reliability; 1.55 micron; 1500 hr; InGaAs-InP; LD degradation; MQW DFB LD; accelerated aging test; ambient temperature; empirical lifetime projection method; laser diode degradation; operating voltage; semiconductor lasers; thermal voltage ratio; Accelerated aging; Artificial intelligence; Diode lasers; Extrapolation; Monitoring; Quantum well devices; Temperature; Testing; Thermal degradation; Voltage;
Conference_Titel :
Reliability Physics Symposium, 1997. 35th Annual Proceedings., IEEE International
Conference_Location :
Denver, CO
Print_ISBN :
0-7803-3575-9
DOI :
10.1109/RELPHY.1997.584272
