DocumentCode
3460633
Title
Life tests and failure mechanisms of GaN/AlGaN/InGaN light emitting diodes
Author
Barton, Daniel L. ; Osinski, Marek ; Perlin, Piotr ; Helms, Christopher J. ; Berg, Niel H.
Author_Institution
Sandia Nat. Labs., Albuquerque, NM, USA
fYear
1997
fDate
8-10 Apr 1997
Firstpage
276
Lastpage
281
Abstract
Our studies of device lifetime and the main degradation mechanisms in Nichia blue LEDs date back to Spring 1994. Following the initial studies of rapid failures under high current electrical pulses, where metal migration was identified as the cause of degradation, we have placed a number of Nichia NLPB-500 LEDs on a series of life tests. The first test ran for 1000 hours under normal operating conditions (20 mA at 23°C). As no noticeable degradation was observed, the second room temperature test was performed with the same devices but with a range of currents between 20 and 70 mA. After 1600 hours, some degradation in output intensity was observed in devices driven at 60 and 70 mA, but it was still less than 20%. The subsequent tests included stepping up the temperature by 10°C in 500 h intervals up to a final temperature of 85°C using the same currents applied in the second test. This work reviews the failure analysis that was performed on the degraded devices and the degradation mechanisms that were identified
Keywords
III-V semiconductors; aluminium compounds; failure analysis; gallium compounds; indium compounds; life testing; light emitting diodes; semiconductor device reliability; semiconductor device testing; 20 to 70 mA; 23 to 85 C; 500 to 1600 hr; GaN-AlGaN-InGaN; LED testing; NLPB-500; Nichia blue LEDs; degradation mechanisms; degraded devices; device lifetime; failure analysis; failure mechanisms; life tests; light emitting diodes; output intensity; room temperature test; Aluminum gallium nitride; Degradation; Failure analysis; Gallium nitride; Life testing; Light emitting diodes; Performance evaluation; Radio access networks; Springs; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1997. 35th Annual Proceedings., IEEE International
Conference_Location
Denver, CO
Print_ISBN
0-7803-3575-9
Type
conf
DOI
10.1109/RELPHY.1997.584273
Filename
584273
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