Title :
High efficiency GaN class E amplifier for polar transmitter
Author :
Ghajar, M. Reza ; Boumaiza, Slim
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of Waterloo, Waterloo, ON, Canada
Abstract :
This paper focuses on the design of a high efficiency 10 Watt Class E power amplifier (PA) suitable for polar radio transmitters. The PA prototype, designed using GaN HEMT devices to operate at 2.5 GHz, revealed a Power Added Efficiency (PAE) and an output power of 74% and 38.3 dBm, respectively, for a supply voltage equal to 28 V. It also demonstrated an excellent suppression of the second and third harmonics in excess of -50 dBc. The measurement of the Class E performance over large range of drain supply voltages confirmed its appropriateness for polar transmitter as a good efficiency was maintained at large output power back-off, i.e. PAE equal to 48% was measured at 11 dB back off.
Keywords :
III-V semiconductors; gallium compounds; polar semiconductors; power amplifiers; power semiconductor devices; radio transmitters; wide band gap semiconductors; GaN; HEMT devices; class E amplifier; frequency 2.5 GHz; polar radio transmitters; power 10 W; power added efficiency; second harmonics; supply voltage equal; third harmonics; Gallium nitride; HEMTs; High power amplifiers; Power amplifiers; Power generation; Power measurement; Power system harmonics; Prototypes; Radio transmitters; Voltage; Class E; High Efficiency; Polar Transmitters; Power Amplifier;
Conference_Titel :
Signals, Circuits and Systems (SCS), 2009 3rd International Conference on
Conference_Location :
Medenine
Print_ISBN :
978-1-4244-4397-0
Electronic_ISBN :
978-1-4244-4398-7
DOI :
10.1109/ICSCS.2009.5412570
