A new technique to measure an oxide trap density in a hot carrier stressed n-MOSFET

Author

Wang, Tahui ; Chiang, L.P. ; Chang, T.E. ; Zous, N.K. ; Shen, K.Y. ; Huang, C.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

1997

fDate

8-10 Apr 1997

Firstpage

292

Lastpage

295

Abstract

We have proposed a new measurement technique to characterize the hot carrier stress generated oxide traps in a n-MOSFET by measuring subthreshold current. In this technique, a specially designed measurement consisting of a series of oxide charge detrapping and subthreshold current measurement phases was performed. An analytical model accounting for the temporal evolution of subthreshold current due to oxide charge detrapping was derived. Our study shows that this method is extremely sensitive to an oxide charge variation. By using this method, the oxide trap growth rates by hot electron stress and hot hole stress were measured

Keywords

MOSFET; electron traps; hole traps; hot carriers; semiconductor device models; semiconductor device reliability; semiconductor device testing; NMOSFET; analytical model; hot carrier stress generated oxide traps; hot carrier stressed n-MOSFET; hot electron stress; hot hole stress; measurement technique; n-channel MOSFET; oxide charge detrapping; oxide charge variation; oxide trap density measurement; oxide trap growth rates; subthreshold current; Character generation; Charge measurement; Current measurement; Density measurement; Hot carriers; MOSFET circuits; Measurement techniques; Phase measurement; Stress measurement; Subthreshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1997. 35th Annual Proceedings., IEEE International

Conference_Location

Denver, CO

Print_ISBN

0-7803-3575-9

Type

conf

DOI

10.1109/RELPHY.1997.584276

Filename

584276