DocumentCode :
3460702
Title :
Inverse class F power amplifier in push-pull configuration
Author :
Frebrowski, Daniel ; Boumaiza, Slim
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Waterloo, Waterloo, ON, Canada
fYear :
2009
fDate :
6-8 Nov. 2009
Firstpage :
1
Lastpage :
4
Abstract :
This paper presents an inverse class F (class F-1) power amplifier (PA) using a 10 W gallium nitride (GaN) transistor, in push-pull configuration. This topology is similar to the current-mode class D (CMCD) PA. First a single class F-1 PA was designed and simulated, predicting over 78% power-added efficiency (PAE). A planar half-wave balun was designed and optimized to give equal power division with 180° phase shift. A PA was simulated and fabricated containing two identical class F-1 PAs in push-pull. The fabricated PA achieved over 75% drain efficiency at 2.46 GHz, with 42.7 dBm output. Notably, the PA achieved more than 70% drain efficiency over a bandwidth of 80 MHz.
Keywords :
III-V semiconductors; UHF power amplifiers; baluns; gallium compounds; wide band gap semiconductors; GaN; bandwidth 80 MHz; current-mode class D PA; drain efficiency; equal power division; frequency 2.46 GHz; inverse class F power amplifier; planar half-wave balun; push-pull configuration; Circuits and systems; Costs; Frequency; Gallium nitride; III-V semiconductor materials; Linearity; Power amplifiers; Topology; Transmitters; Voltage; Power amplifier (PA); gallium nitride (GaN); inverse class F;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Signals, Circuits and Systems (SCS), 2009 3rd International Conference on
Conference_Location :
Medenine
Print_ISBN :
978-1-4244-4397-0
Electronic_ISBN :
978-1-4244-4398-7
Type :
conf
DOI :
10.1109/ICSCS.2009.5412576
Filename :
5412576
Link To Document :
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