Electromechanical resonances of SiC and AlN beams under ambient conditions

Author

Brueckner, K. ; Förster, Ch ; Tonisch, K. ; Cimalla, V. ; Ambacher, O. ; Stephan, R. ; Blau, K. ; Hein, M.A.

Author_Institution

Dept. for RF & Microwave Techniques, Technische Univ. Ilmenau, Germany

Volume

3

fYear

2005

fDate

4-6 Oct. 2005

Abstract

MEMS resonators offer great potential for RF sensor and filter applications. A semiconductor process has been used to prepare SiC and AlN beam resonators. The metallised beams are excited by an RF current in a permanent magnetic field. The resonant response is detected by the induced voltage. Despite the weakness of the signal, accurate detection has been achieved in the time domain, under ambient conditions in a magnetic field of about 0.5 T. The resonant response bears valuable information on the structural quality of the material and identifies potential for further improvement. The time domain technique presents an elegant approach to sensing applications.

Keywords

III-V semiconductors; aluminium compounds; micromechanical resonators; microsensors; silicon compounds; time-domain synthesis; wide band gap semiconductors; AlN; MEMS resonators; RF sensor; SiC; ambient conditions; beam resonators; electromechanical resonances; filter application; metallised beams; permanent magnetic field; resonant response; semiconductor process; structural quality; time domain technique; Electromechanical sensors; Magnetic fields; Magnetic materials; Magnetic resonance; Magnetic sensors; Magnetic separation; Micromechanical devices; Radio frequency; Resonator filters; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2005 European

Print_ISBN

2-9600551-2-8

Type

conf

DOI

10.1109/EUMC.2005.1610243

Filename

1610243