Title :
50 Gb/s DFF and decision circuits in InP DHBT technology for ETDM systems
Author :
Konczykowska, A. ; Jorge, F. ; Riet, M. ; Moulu, J. ; Godin, J.
Author_Institution :
Alcatel-Thales III-V Lab, Marcoussis, France
Abstract :
In this paper we present two ICs fabricated in InP DHBT technology and devoted to 43 Gbit/s and over transmission systems: reshaping DFF for the transmitter and decision circuit for the receiver. High quality system operation and ease of insertion in system environment are achieved simultaneously with significant reduction of power consumption. 40-50 Gb/s measurements are presented.
Keywords :
decision circuits; heterojunction bipolar transistors; indium compounds; integrated circuit manufacture; time division multiplexing; 50 Gb/s DFF; ETDM systems; InP; InP DHBT technology; decision circuits; Circuits; Clocks; DH-HEMTs; Energy consumption; Frequency; Indium gallium arsenide; Indium phosphide; Optical receivers; Optical transmitters; Time division multiplexing;
Conference_Titel :
Microwave Conference, 2005 European
Print_ISBN :
2-9600551-2-8
DOI :
10.1109/EUMC.2005.1610248
